| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a semiconductor layer with high resistance at such a temperature that a glass substrate is used by dissolving a non-film formation gas by plasma and introducing into a reaction chamber a film formation gas containing atoms constituting mainly a non-single crystal semiconductor thin film a specified time after the non-film formation gas is introduced. SOLUTION: A non-film formation gas is introduced into a reaction chamber 10, and it is applied with high frequency while synchronizing it with the introduction of the non-film formation gas. As a result, a plasma is formed and a non- film formation gas is dissolved by the plasma. Next, a film formation gas is introduced into the reaction chamber 10 a specified time after the introduction of non-film formation gas. The film formation gas reacts with a dissolved substance of the non-film formation gas and a non-single crystal semiconductor thin film is formed on a substrate 13 to be treated which is housed in the reaction chamber 10. The film formation gas contains atoms constituting mainly a non-single crystal semiconductor thin film, and an SiH4 , etc., are used for forming film of polycrystal silicon. The non-film formation gas is an inactive gas or hydrogen, or halogen.</p> |
