发明名称 SEMICONDUCTOR ACCELERATION SENSOR
摘要 PROBLEM TO BE SOLVED: To prevent the adverse effects by the stress from the side of a substrate utmost even in the constitution, in which the small acceleration such as in the acceleration of about±1G is accurately detected. SOLUTION: A sensor chip 23 is made of silicon of 3,6mm square and formed into the constitution so as to support an overlapped part 26 on a frame 24 through four beam parts 25a and 25c. Diffused resistors having piezoresistance effect are formed on the beam parts 25a and 25c and connected as bridges. The sensor chip 23 is bonded and fixed to a ceramic substrate 21 by bonding agent 27 through a silicon pedestal 22 having the thickness dimension of 1.75mm. For the bonding agent 27, resin beads 27b are blended into base bonding agent comprising silicone resin at the blending ratio of 0.1wt.%. The Stress strain, which is received by the sensor chip 23 from the side of the substrate 21 is alleviated for the temperature stress test. Therefore, sensitivity fluctuation can be decresed to less than 2%, and the accleration of about±1G can be detected accurately.
申请公布号 JPH1054843(A) 申请公布日期 1998.02.24
申请号 JP19960211089 申请日期 1996.08.09
申请人 DENSO CORP 发明人 MURATA MINORU;AO KENICHI;ISHIO SEIICHIRO;SHIMOYAMA YASUKI;KAORUDA TOMOHITO
分类号 G01P15/12;(IPC1-7):G01P15/12 主分类号 G01P15/12
代理机构 代理人
主权项
地址