| 摘要 |
PROBLEM TO BE SOLVED: To enhance the light transmission through an anode electrode and mass productivity by depositing a dielectric on an anode electrode thereby decreasing the difference of refractive index between the anode electrode and the periphery of an element affinely. SOLUTION: An n-type GaN layer 3 and a p-type GaN layer 5 are epitaxially grown sequentially on a sapphire substrate 1. An anode electrode 7 is formed in a specified range on the P-type GaN layer 5 and a cathode electrode 9 is formed on the n-type GaN layer 3. Furthermore, a dielectric layer 17 is formed on the p-type GaN layer 5 except the part where the anode electrode 7 is formed. A bonding electrode 19 to be connected electrically with the anode electrode 7 is formed on the dielectric layer 17. More specifically, a dielectric 15 is deposited on the anode electrode 7 except the part where the bonding electrode 19 is formed. Since the dielectric 15 is deposited on the anode electrode 7, the difference of refractive index is decreased affinely between the anode electrode 7 and the periphery of an element and translucence of the anode electrode 7 is enhanced. |
