发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE USING HIGH RESOLVING POWER LITHOGRAPHY AND DEVICE THEREFOR
摘要 PROBLEM TO BE SOLVED: To make the polarity of a photoresist reversible by activating a 2nd photosensitive blend so that a 1st reaction is canceled. SOLUTION: A photoresist device contains a 1st photosensitive blend which is activated at a 1st characteristic value and causes a 1st reaction and a 2nd photosensitive blend which is activated at a 2nd characteristic value so that the 1st reaction is canceled. In the photoresist device, a negative photosensitive component contained in a photoresist layer 32 is activated with exposure energy having a higher energy level than an energy level E2 and a positive photosensitive component contained in the layer 32 is activated at an energy level between an energy level E1 and the energy level E2.
申请公布号 JPH1055068(A) 申请公布日期 1998.02.24
申请号 JP19970133970 申请日期 1997.05.23
申请人 TEXAS INSTR INC <TI> 发明人 PALMER SHANE R
分类号 G03F7/038;G03F7/039;G03F7/095;G03F7/20;G03F7/26;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/038
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