Method for manufacturing and testing a nonvolatile memory device

摘要

On completion of a test for data storing characteristics under a condition of the wafer (step S4), the test data are rewritten to the data having inverted data pattern (step S6). Thereafter, package-sealing process is carried out (step S8). Then, the conditions of the test for data storing characteristics after packaging the memory are set (step S10). Set of the conditions is carried out by calculating the data pattern of a step for heating under data storing condition, heating duration and heating temperature, all of which will be carried out in the next process in accordance with the stress calculated in every data pattern as to the step S4 and the step S8 which have been completed. The "habit of data storing" of the ferroelectric memory device can be decreased throughout all the steps for heating under data storing condition by setting the conditions of step for heating under data storing condition which will be carried out in next process so as sum total of the stress for each data pattern to make close with one another as much as possible.