发明名称 |
Manufacturing method for silicon nitride-based sintered body |
摘要 |
The invention aims to offer a method to manufacture a high-strength, high-reliability and low cost silicon nitride based sintered body which is not affected by the amount of metal impurities contained in the silicon nitride powder, without using high-purity silicon nitride powder, and can be sintered for a short sintering time. The invention uses silicon nitride and sintering aids, and the powder mixture containing 500-5000 ppm metal impurities is sintered at temperatures ranging from 1300 DEG -1900 DEG C., and under the conditions wherein the product of sintering temperature and sintering time ranges from 1x105 to 10x105 DEG C. xseconds.
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申请公布号 |
US5720917(A) |
申请公布日期 |
1998.02.24 |
申请号 |
US19960638587 |
申请日期 |
1996.04.29 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MATSUURA, TAKASHI;NISHIOKA, TAKAO;YAMAKAWA, AKIRA |
分类号 |
C04B35/584;C04B35/593;C04B35/64;(IPC1-7):C04B35/584 |
主分类号 |
C04B35/584 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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