发明名称 Manufacturing method for silicon nitride-based sintered body
摘要 The invention aims to offer a method to manufacture a high-strength, high-reliability and low cost silicon nitride based sintered body which is not affected by the amount of metal impurities contained in the silicon nitride powder, without using high-purity silicon nitride powder, and can be sintered for a short sintering time. The invention uses silicon nitride and sintering aids, and the powder mixture containing 500-5000 ppm metal impurities is sintered at temperatures ranging from 1300 DEG -1900 DEG C., and under the conditions wherein the product of sintering temperature and sintering time ranges from 1x105 to 10x105 DEG C. xseconds.
申请公布号 US5720917(A) 申请公布日期 1998.02.24
申请号 US19960638587 申请日期 1996.04.29
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 MATSUURA, TAKASHI;NISHIOKA, TAKAO;YAMAKAWA, AKIRA
分类号 C04B35/584;C04B35/593;C04B35/64;(IPC1-7):C04B35/584 主分类号 C04B35/584
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