| 摘要 |
<p>PROBLEM TO BE SOLVED: To materialize high reliability and materialize the constitution capable of large capacity by forming a selective transistor a little to the diffusion layer on drain side out of the area on a channel region, and so arranging the constitution as not to make diffusion layer between a nonvolatile memory cell and the selective transistor. SOLUTION: The size of a cell is made small by so arranging the constitution as not to make a diffusion layer between a memory cell and a selective transistor. Making the diffusion layers as source/drain on both sides of the set of the memory cell and a selective transistor is performed by ion implantation, etc., after making of the floating gate and the control gate of the memory cell and the selective gate of the selective transistor. At this time, the selective gate is provided with an overlap section so that it may overlap the memory cell. As a result, even if the selective gate wears, a gap is never made between the two transistors, and a diffusion layer is not made between the two transistors.</p> |
