发明名称 HEAT TREATMENT APPARATUS FOR WAFER AND METHOD FOR CHARGING WAFER TO THE APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a sheet-fed heat treatment apparatus capable of keeping the heat-depression and temperature uniformity even in the case of using a wafer-supporting jig made of a quartz glass, suppressing the increase in the size of apparatus and the generation of particles and keeping high heat- insulation property. SOLUTION: This heat treatment apparatus us composed of a wafer- supporting jig 40 made of a quartz glass and supporting one or two semiconductor wafers in vertical state and a reaction vessel 50 made of a quartz glass and encircling the semiconductor wafer supported by the supporting jig to form a space for the heat treatment of the wafer. The reaction vessel is formed in the form of a flat dome having a flat face at the side of the heat-treating face of the wafer. An opaque part opacified by including bubbles or other means is present in at least a part of the extending quartz glass part 43 of the supporting jig 40 extending through the lower opening of the vessel.
申请公布号 JPH1053499(A) 申请公布日期 1998.02.24
申请号 JP19960224401 申请日期 1996.08.07
申请人 YAMAGATA SHINETSU SEKIEI:KK;SHINETSU QUARTZ PROD CO LTD 发明人 ISE YOSHIAKI;TAKAHASHI SHIYOUJI;SUZUKI SHIGEHARU
分类号 C30B33/02;H01L21/205;H01L21/22;H01L21/31;H01L21/324;H01L21/677;H01L21/68;(IPC1-7):C30B33/02 主分类号 C30B33/02
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