发明名称 |
HEAT TREATMENT APPARATUS FOR WAFER AND METHOD FOR CHARGING WAFER TO THE APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a sheet-fed heat treatment apparatus capable of keeping the heat-depression and temperature uniformity even in the case of using a wafer-supporting jig made of a quartz glass, suppressing the increase in the size of apparatus and the generation of particles and keeping high heat- insulation property. SOLUTION: This heat treatment apparatus us composed of a wafer- supporting jig 40 made of a quartz glass and supporting one or two semiconductor wafers in vertical state and a reaction vessel 50 made of a quartz glass and encircling the semiconductor wafer supported by the supporting jig to form a space for the heat treatment of the wafer. The reaction vessel is formed in the form of a flat dome having a flat face at the side of the heat-treating face of the wafer. An opaque part opacified by including bubbles or other means is present in at least a part of the extending quartz glass part 43 of the supporting jig 40 extending through the lower opening of the vessel. |
申请公布号 |
JPH1053499(A) |
申请公布日期 |
1998.02.24 |
申请号 |
JP19960224401 |
申请日期 |
1996.08.07 |
申请人 |
YAMAGATA SHINETSU SEKIEI:KK;SHINETSU QUARTZ PROD CO LTD |
发明人 |
ISE YOSHIAKI;TAKAHASHI SHIYOUJI;SUZUKI SHIGEHARU |
分类号 |
C30B33/02;H01L21/205;H01L21/22;H01L21/31;H01L21/324;H01L21/677;H01L21/68;(IPC1-7):C30B33/02 |
主分类号 |
C30B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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