| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device of which heat dissipation ability is improved, of which miniaturization is achieved, and of which the heat of the chip is dissipated fast through the two major surface of the semiconductor chip even if its structure is weak against stresses. SOLUTION: This semiconductor device is provide with six IGBT chips 4 which have collector electrodes on one major surface, and emitter electrodes and gate electrodes on the other major surface, and two high heat-conductivity insulation substrates 2, 3 between which these IGBT chips 4 are interposed, and which have, on the opposed sides of the substrates 2, 3, electrode pattern 13, 14, 19 to be joined to the electrodes of the IGBT chips. The electrodes of IGBT chips and the electrode patterns 13, 14, 19 of the high heat-conductivity insulation substrate 2, 3 are joined by soldering.</p> |
