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发明名称
METHOD FOR REMOVING POSIITYPE PHOTORESIST
摘要
PURPOSE:To provide a method for removing posi-type photoresist of naphthoquine diazide type at normal temperature using hydrazine (aqueous solution), with washing after removal being performed with cheap water.
申请公布号
JPS5267629(A)
申请公布日期
1977.06.04
申请号
JP19750142994
申请日期
1975.12.03
申请人
HITACHI LTD
发明人
YAMAGUCHI HISAO
分类号
H01L21/30;G03F7/30;G03F7/32;G03F7/42;H01L21/027
主分类号
H01L21/30
代理机构
代理人
主权项
地址
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