发明名称 Photovoltaic element and fabrication process thereof
摘要 Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.
申请公布号 US5720826(A) 申请公布日期 1998.02.24
申请号 US19960657066 申请日期 1996.05.29
申请人 CANON KABUSHIKI KAISHA 发明人 HAYASHI, RYO;FUJIOKA, YASUSHI;OKABE, SHOTARO;KANAI, MASAHIRO;MATSUYAMA, JINSHO;SAKAI, AKIRA;KODA, YUZO;HORI, TADASHI;YAJIMA, TAKAHIRO
分类号 H01L31/04;H01L31/0392;H01L31/075;H01L31/20;(IPC1-7):H01L31/075 主分类号 H01L31/04
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