发明名称 |
Photovoltaic element and fabrication process thereof |
摘要 |
Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.
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申请公布号 |
US5720826(A) |
申请公布日期 |
1998.02.24 |
申请号 |
US19960657066 |
申请日期 |
1996.05.29 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
HAYASHI, RYO;FUJIOKA, YASUSHI;OKABE, SHOTARO;KANAI, MASAHIRO;MATSUYAMA, JINSHO;SAKAI, AKIRA;KODA, YUZO;HORI, TADASHI;YAJIMA, TAKAHIRO |
分类号 |
H01L31/04;H01L31/0392;H01L31/075;H01L31/20;(IPC1-7):H01L31/075 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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