| 摘要 |
PROBLEM TO BE SOLVED: To improve dielectric constant, remaining polarization, hysteresis characteristics, etc., by using a target of density near theoretical value when forming a high melting point material thin film or ferroelectrics thin film on a substrate by a spattering method. SOLUTION: To a target holding means provided in a process chamber of a spattering device, a target of a high (ferro) dielectrics having density equal to or more than 90% of theoretical value is attached. A PZT film formed with a high density target (90% or more) is, compared to a PZT film formed with low density (90% or less), larger in remaining polarization 2pr, with improved electric characteristics and hysteresis characteristics, and large remaining polarization ratio is obtained. By using a high density target closer to a theoretical density of perovskite type crystal, a cluster closer to the perovskite type crystal (fine crystal) is obtained at sputtering, and the structure is maintained after film-forming. |
