MOTT TRANSITION MOLECULAR FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a novel field-effect transistor switch which is based on Mott metal-insulator transition in a single-layered or multilayered film of a bistable molecule. SOLUTION: The field-effect transistor includes a source electrode 14, a drain electrode 16, a gate electrode 20, and a conductive channel 10 formed between the source and drain electrodes. The conductive channel 10 comprises a two-dimensional array of at least one layer molecule, the conductive channel 10 is separated from the gate electrode 20 by means of an insulating spacer layer 18 so that the above molecule can be subjected to Mott metal-insulator transition.