| 摘要 |
PROBLEM TO BE SOLVED: To obtain a new polymer which can become a main component for practical resist materials because of its excellent resolution, pattern sidewall and focal depth margin by introducing acetal or ketal groups which is readily eliminated with an acid into the molecule. SOLUTION: This polymer has a chemical structure of the formula [R<1> and R<2> are independently of each other H, a lower alkyl; R<3> and R<4> are independently H, a (halogen-substituted) alkyl; R<5> is a (halogen-substituted) alkyl or an aralkyl; R<6> is phenyl; m and n are each an integer more than 1; k is 0, an integer more than 1; where 0.1<=(m+k)/(m+n+k)<=0.9 and 0<=k/(m+n+k)<=0.25] and a degree of dispersion of <1.5. When this polymer is used as a resist material, a substance liberating an acid by the irradiation with radiation is preferably used together. Thus, the defect caused by the conventional polymer is overcome to be largely contributable to formation of superfine patterns in the semiconductor industry. |
