| 摘要 |
PROBLEM TO BE SOLVED: To obtain a compact plasma chemical vapor deposition device capable of realizing uniform formed coating thickness on each substrate by arranging plural pieces of high frequency discharge electrodes with small areas composed of an upper electrode provided with a gas introducing port and a lower electrode provided with a heater in a single evacuated tank. SOLUTION: In an evacuated tank 1, plural high frequency discharge electrodes 10 with small areas composed of an upper electrode 8 and a lower electrode 9 facing each other are discretely arranged. At the lower face of the upper electrode 8, a gas introducing port communicating to a gas introducing tube 11 is formed. Besides, the lower electrode 9 is incorporated with a heater, and thereon, a substrate 7 is arranged individually by small pieces, preferably, by one piece. While reaction gas of silane or the like is fed toward the substrate 7 from the gas introducing port, plasma is generated between the discharge electrodes 10 by a high frequency power source 4, by which, on all substrates 7 heated to a prescribed temp., thin film essentially consisting of SiO2 or the like is obtd. by uniform film thickness of about±1% precision.
|
