| 摘要 |
PROBLEM TO BE SOLVED: To economically obtain thin film having gas barriering properties, translucency and retorting properties and furthermore imparted with ultraviolet resistance by incorporating metals other than silicon into SiOX thin film. SOLUTION: This is SiOX thin film contg. metals other than silicon, preferably, contg. colored metals such as Fe, Ni, Cu, Co, Cr or the like and having translucency and coloring, in which its film thickness can be regulated to the optional one of <=10μm, particularly, in the range of 100Åto 10μm. In is preferably that, in the SiOX thin film, Si-contg. organic matter such as dimethoxy (methyl) silane and organic matter contg. metals other than silicon such as ferrocene as an Fe source arre used as raw materials, and film formation is executed by a CVD process, preferably, by an ECR plasma CVD process.
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