发明名称 SEMICONDUCTOR ELEMENT MANUFACTURING WASHING LIQUID AND MANUFACTURE OF SEMICONDUCTOR ELEMENT USING IT
摘要 PROBLEM TO BE SOLVED: To easily remove a polymer accumulated at dry etching process without corroding a metal film by using an aqueous solution containing specified quaternary ammonium salt, fluorine-containing compound, water soluble or water-miscible organic solvent, inorganic acid and organic acid. SOLUTION: An aqueous solution, expressed with a formula [(R<1> )3 N-R<2> ]<+> aX<a-> (R<1> is an alkyl group of carbon number 1-4, 3R<1> s may be the same or different from one another, and R<2> is an alkyl group of carbon number 1-4 or hydroxy alkyl group. X<a-> is inorganic or organic anion, and (a) is valence of the anion.), containing quaternary ammonium slat, fluorine-containing compound such as hydrofluoric acid and ammonium fluoride, water soluble or water- miscible organic solvent, inorganic acid and organic acid, is used. Thereby an accumulated polymer generated at dry etching process is easily removed without corroding a metal film.
申请公布号 JPH1055993(A) 申请公布日期 1998.02.24
申请号 JP19960211217 申请日期 1996.08.09
申请人 HITACHI LTD;TEXAS INSTR JAPAN LTD;MITSUBISHI GAS CHEM CO INC 发明人 TORII ZENZO;SASABE SHUNJI;KOJIMA MASAYUKI;USUAMI HIROHISA;TOKUNAGA TAKAFUMI;HARA KAZUSATO;OHIRA YOSHIKAZU;MATSUI TAKESHI;GOTO HIDETO;AOYAMA TETSUO;HASEMI TAKASHI;IKEDA HIDETOSHI
分类号 C11D7/60;G03F7/42;H01L21/02;H01L21/302;H01L21/304;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/304;H01L21/306;H01L21/321 主分类号 C11D7/60
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