| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device and its manufacturing method. SOLUTION: An adhesive reinforcement layer 116 is formed between a lower electrode 118 of a ferroelectric capacitor and a first interlayer insulating film 110. A diffusion barrier layer 122 is formed between a ferroelectric pattern 120 of the ferroelectric capacitor and an upper electrode 124. As a result, the adhesive force between the capacitor electrode and the interlayer insulating film or between the ferroelectric pattern and the electrode can be improved. In addition, the material included in the ferroelectric pattern is prevented from diffusing into the interlayer insulating film. |
