| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory element, along with its manufacturing method, in which a lower electrode doesn't come off and a deterioration in characteristics of the ferrodielectric thin film can be prevented. SOLUTION: A lower electrode, a ferroelectric tin film, and an upper electrode are sequentially deposited on a semiconductor substrate 10. The lower electrode includes a nitride thin film 4 made of a nitride material selected from Ti, Zr, Hf, V, Nb, Ta and W, and a Pt thin film 5 on the nitride thin film 4. In addition, the lower electrode includes an oxide thin film 6 on the Pt thin film 5. The oxide thin film 6 is made of an oxide material selected from Ru, Ir, Re, Os, and Rh. |
