| 发明名称 |
Method of making high-speed, low-noise millimeterwave HEMT and pseudormorphic HEMT |
| 摘要 |
An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP0.39+ySb0.61-y.
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| 申请公布号 |
US5721161(A) |
申请公布日期 |
1998.02.24 |
| 申请号 |
US19950555442 |
申请日期 |
1995.11.09 |
| 申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
NGUYEN, CHANH;LIU, TAKYIU;MATLOUBIAN, MEHRAN |
| 分类号 |
H01L21/335;H01L29/201;H01L29/205;H01L29/778;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/335 |
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