| 摘要 |
PROBLEM TO BE SOLVED: To reduce sheet resistance of an electrode wiring containing a TiSi2 film by forming a titanium nitride layer on a titanium silicide layer formed on a polycrystal silicon film constituting an electrode wiring. SOLUTION: A gate insulation film 3pi is, for example, of silicon dioxide SiO2 . A gate electrode 3pg is formed by laminating a plurality of conductive films 3pg1-3pg3, in order from the lowest layer. The conductive film 3pg1 of the lowest layer is, for example, of low resistance polysilicon. The conductive film 3pg2 of the next lowest layer is, for example, of titanium silicide TiSi2 . Further, the conductive film 3pg3 of the uppermost layer is, for example, of titanium nitride TiN. By providing the conductive film 3pg3 of TiN, etc., on the conductive film 3pg2 of TiSi2 , etc., the resistance of the gate electrode 3pg is lowered without generating foreign substance, for improved reliability in strength of the gate electrode 3pg. |
