COMPOUND SEMICONDUCTOR EPITAXIAL SUBSTRATE AND COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial substrate capable of suppressing a leak current of a HEMT including an InAlN carrier layer and a compound semiconductor device.SOLUTION: The compound semiconductor epitaxial substrate includes: a substrate 101; a channel layer 104 above the substrate 101; and an InAlN carrier supply layer 106 above the channel layer 104. A period of unevenness on a surface of the carrier supply layer 106 is greater than or equal to 50 nm. Arithmetic average roughness of a surface of the carrier supply layer 106 is less than or equal to 0.4 nm.SELECTED DRAWING: Figure 7