Integrated circuit chip having isolation trenches composed of a dielectric layer with oxidation catalyst material

摘要

An integrated circuit with FETs having an essentially uniform gate oxide thickness and FETs having gate oxide thickness enhanced along the sides. FETs with enhanced gate oxide have an ONO layer diffused with potassium in close proximity to the enhanced (thicker) oxide, and, as a result, have a slightly higher Vt and much more attenuated soft turn on.