| 发明名称 |
Heterojunction-type bipolar transistor with ballast resistance layer |
| 摘要 |
A heterojunction type AlGaAs/GaAs bipolar transistor includes an n-GaAs collector layer, a p+-GaAs base layer and an n-AlxGa1-xAs emitter layer formed in a stack, and an n-AlyGa1-yAs ballast resistance layer formed on the emitter layer. The ballast resistance layer has an Al concentration y in the range of 0<y<0.4, and a resistance higher than that of the emitter layer.
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| 申请公布号 |
US5721437(A) |
申请公布日期 |
1998.02.24 |
| 申请号 |
US19950518673 |
申请日期 |
1995.08.23 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TWYNAM, JOHN KEVIN;YAGURA, MOTOJI;SHINOZAKI, TOSHIYUKI;KINOSADA, TOSHIAKI |
| 分类号 |
H01L29/08;H01L29/737;(IPC1-7):H01L31/032;H01L31/033 |
主分类号 |
H01L29/08 |
| 代理机构 |
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