发明名称 |
Memory with EEPROM cell having capacitive effect and method for the reading of such a cell |
摘要 |
In a memory cell of an EEPROM or flash-EEPROM memory, the source and the drain of a floating-gate transistor forming the non-volatile memorizing device are connected together. It is shown that the capacitive behavior of the cell is then differentiated at the time of the reading depending on whether it is in a programmed state or in an erased state. This difference in behavior is used to differentiate the logic states.
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申请公布号 |
US5721440(A) |
申请公布日期 |
1998.02.24 |
申请号 |
US19960629550 |
申请日期 |
1996.04.09 |
申请人 |
GEMPLUS CARD INTERNATIONAL |
发明人 |
KOWALSKI, JACEK |
分类号 |
G11C17/00;G11C16/02;G11C16/04;G11C17/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;H01L29/94;(IPC1-7):H01L29/788 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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