| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method suitable for the manufacture of a micro device high in dimensional accuracy and a minute electromechanical system. SOLUTION: By this method, the dry etching to etch a semiconductor substrate 24 which has a p-n hetero junction 29 being made by bringing a p layer 28 and an n layer 26 into contact with each other is performed. In this case, reverse bias voltage lower than the p-n breakdown voltage is applied to the p-n hetero junction 29. Moreover; the n layer 29 is irradiated with a plasma flow 12 including chemical reactive ions 14, and the etching of the unmasked region of the substrate 24 is continued until it stops substantially at the hetero junction 29 where reverse voltage is applied. Furthermore, to suppress the sidewall damage to the substrate 24 in the progress of downward etching, the substrate 24 is coated again periodically with cooling or corrosible material. |
