| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a read only memory capable of reducing power consumed for precharging a bit line by reducing the number of memory cells connected to the bit line. SOLUTION: A higher rank word line 11 driven by an output of a higher rank address decoder 4 is provided, and alternate memory cells 12 are arranged on respective intersected points between the higher rank word line 11 and the bit lines 3, and only when plural all memory cells 1 arranged on the intersected points with the bit lines 3 are set in a value of a condition connected to the bit lines 3, the memory cells 1 in this area aren't connected with the bit lines 3, but the alternate memory cells 12 in this area are connected with the bit lines 3.</p> |
