| 摘要 |
PROBLEM TO BE SOLVED: To provide the high luminance and high reliability semiconductor light emitting element which is manufactured at a low cost and with a high yield and in which the light emission efficiency is improved. SOLUTION: The element is configured with a semiconductor substrate 1, a light emitting area including at least a clad layer 2, an active layer 3 and a clad layer 4 on the semiconductor substrate 1, and a current path adjustment layer 5. At least a 1st area A1 and 2nd areas A2, A3 whose orientation differs from each other are provided on the surface of the semiconductor substrate 1, and the N-channel conduction type current path adjustment layer 5 is adopted on the 1st area A1 and the P-channel conduction type current path adjustment layer 5 is adopted on the 2nd areas A2, A3. |
