| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric memory device which can realize a device having a small area by a simple process and can manufacture a non-volatile memory device which operates at high speed. SOLUTION: According to a method of manufacturing a ferroelectric memory device, an insulating film 3, a ferroelectric film 4, and a conductive thin film 5 are sequentially formed on a semiconductor substrate 1 having a field oxide film 2 region, thereby forming a gate. The gate is used as a mask and a source and a drain are formed by self-alignment. At this time, impurity ions are implanted into the source and the drain, and after that, activated by lamp annealing using an infrared ray lamp 9. |
