MANUFACTURE OF HIGH FREQUENCY SHOTTKY BARRIER DIODE USING GAAS SUBSTRATE AS BASE

摘要

PROBLEM TO BE SOLVED: To provide the manufacture of the Shottky barrier diode with a comparatively small contact resistance using an active device layer of a hetero junction bipolar transistor. SOLUTION: The Shottky barrier diode is formed by a profile integrating a GaAs substrate 20, a sub-collector layer 22 and a collector layer 24 in the perpendicular direction. A proper dielectric material 34 is adhered onto the collector layer 24. Paths 28, 30 for barrier and ohmic contacts 42, 40 are formed to the collector layer 24 and the sub collector layer 22. The collector path 28 is comparatively deeply etched up to the collector layer 24 to decrease the series resistance between the barrier contact 42 and the ohmic contact 40 and to set the cut-off frequency characteristic comparatively higher.