| 摘要 |
PROBLEM TO BE SOLVED: To provide a member for a semiconductor manufacturing device which, high in heat conductivity, is excellent in durability with respect to thermal impact and excellent in corrosion resistance. especially to fluorocarbon gas. SOLUTION: A base body 14 of an aluminum nitride baked body, a conductive circuit 12 formed on the surface of the base body 14 and an aluminum nitride layer 16 so formed as to coat the conductive circuit 12, are provided. An oxidation layer 17, formed on the surface of the aluminum nitride layer 16 by oxidizing the aluminum nitride layer 16 and a metal oxide layer 18 comprising Al2 O3 , ZrO2 or TiO2 formed on the surface of the oxidation layer 17, are provided. |
