| 摘要 |
<p>PROBLEM TO BE SOLVED: To lower the resistance of a film having high resistance by dispersing carbon into a film of dielectric or insulator having high resistance. SOLUTION: Inside of a filming chamber 1 is coupled with an exhaust valve 3 through an evacuation system 2, and the pressure in the filming chamber 1 is set at a predetermined level. The filming chamber 1 is coupled through a gas introduction system 4 with a gas supply, provided with a mass flow controller 5 and fed with a sputtering gas. The filming chamber 1 is also coupled through a gas introduction system 6 with a gas supply provided with a mass flow controller 7, and methane gas is introduced in order to disperse carbon to a film under deposition. A substrate 8 of Si wafer for depositing a resistance control layer is set at the upper part in the filming chamber 1, and a target 9 of Al2 O3 is set oppositely to the substrate 8 at the lower part in the filming chamber 1 through a cathode 10. When the target 9 is sputtered to the cathode 10 by applying power from an RF power supply 11, a resistance control film dispersed with carbon is obtained.</p> |
