| 摘要 |
A process of fabricating a semiconductor device includes the steps of: forming a base layer of a bipolar transistor (NPN bipolar transistor) on a semiconductor base body by selective epitaxial growth; and forming a dielectric film of a MIS capacitor on the same semiconductor base body. In this process, when side walls for isolating a base electrode connected to the base layer from an emitter layer formed on the base layer are formed, the dielectric film is formed of a silicon nitride film which is the same as one of films constituting the side walls. Thus, a MIS capacitor can be thus formed on one substrate together with a bipolar transistor only by adding the minimum number of steps to the steps of forming the bipolar transistor. |
