| 摘要 |
<p>PROBLEM TO BE SOLVED: To raise and lower a temperature of a semiconductor substrate rapidly and adjust it at a set temperature rapidly by heating and cooling a sucked semiconductor substrate indirectly by a heating mechanism and a cooling mechanism for adjusting a substrate temperature. SOLUTION: A semiconductor substrate is subjected to electrostatic suction and fixed to an electrostatic sucking mechanism. A suction surface of the electrostatic sucking mechanism is heated and cooled. Then, the substrate is heated and cooled by heat conduction from a suction surface or heat conduction to a suction surface and is adjusted at a specified temperature. In the process, heat is conducted rapidly by integrally combining an electrostatic suction mechanism, a heating mechanism and a cooling mechanism. As for arrangement of a heating mechanism and a cooling mechanism, an order of a cooling mechanism - a heating mechanism - an electrostatic sucking mechanism and an order of combination of each mechanism to be combined to an electrostatic sucking mechanism with a cooling mechanism and a heating mechanism provided parallel are essential conditions. As for a heating means of a heating mechanism, either of heating by an electric heater and heating by heating medium circulation can be adopted.</p> |
