| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method and device wherein occurrence of foreign materials is prevented. SOLUTION: A semiconductor device manufacturing device 10 comprises a reaction chamber 2 for film-forming process with a wafer W, the first raw material gas introduction means for allowing the raw material gas to flow in one direction across the film-formation surface of the wafer W, the second raw material gas introduction means for allowing the raw material gas to flow in a direction different from the former direction, across the film formation surface of the wafer W, and a negative pressure source 8 for evacuating the inside of the reaction chamber. A control means 11 which controls actions of the first raw material gas introduction means, the negative pressure source 8 and the second raw material gas introduction means is provided, so that the raw material gas is introduced in the reaction chamber for a specified period by the first raw material gas introduction means, then the introduction of the raw material gas from the first raw material gas introduction means is stopped, with the inside of the reaction chamber 2 evacuated by the negative pressure source 8, and then the raw material gas is introduced in the reaction chamber 2 for a specified period by the second raw material gas introduction means. |
