| 摘要 |
PROBLEM TO BE SOLVED: To provide a high capacity capacitor requiring a small area and its manufacture, by arranging barrier layers consisting mainly of the compounds of transition elements and boron or carbon under a capacitor dielectric, and over the just next pattern not being resistant of oxidation. SOLUTION: A connection pattern 7 comprises polysilicon or tungsten to fill up the contact hole etched within an insulating layer 6. Subsequently, a lower electrode 8 is applied by the sputtering of platinum of about 30nm thick or MOCVD method, and it is patterned. Then, the layer comprising titanium carbides is applied as a barrier layer 9 by sputtering or MOCVD method. As for the thickness of the barrier layer 9, it is advantageous to be about 30nm. Though this barrier layer 9 is removed again partially for separate formation to the adjacent capacitor, at that time at least for a first electrode, the exposed surface is kept covered with a barrier layer so as to suppress O2 diffusion effectively. |
