| 摘要 |
PROBLEM TO BE SOLVED: To stably form an information accumulating electrode of cylinder structure using a ruthenium metal or ruthenium oxides, by constituting an information accumulating electrode or a counter electrode of ruthenium metal or ruthenium oxides. SOLUTION: The gate electrode 3 of the transfer transistor constituting a memory cell, a capacitive diffusion layer 4 to serve as a source/drain region, a diffusion layer 5 for a bit wire, further a lower electrode 15 to serve as an information accumulating electrode, being electrically connected through a contact plug 9 with the capacitive diffusion layer 4, a side electrode 17a, and a bit wire 8 being electrically connected through a contact plug 7 for a bit wire with the diffusion layer 5 for a bit wire are made in the active region excluding the field oxide 2 at the surface of a silicon substrate 1. Then, a cylinder structure of stack-type capacitor is constituted together with an upper electrode 19 being the counter electrode of the information accumulating electrode, and a capacitive insulating film 18. Then, by using a ruthenium film or a ruthenium oxide film for the information accumulating electrode, the formation of cylinder structure of electrode can be facilitated. |
