发明名称 SEMICONDUCTOR DEVICE HAVING MIS STRUCTURE
摘要 PROBLEM TO BE SOLVED: To enhance breakdown strength at off time by releasing a drain region facing a source region. SOLUTION: A source region 6 is rectangular and corner parts 11a, b are semicircular having diameter equal to the short side of the rectangle. A heavily doped p region 8 is provided for well contact. Heavily doped n-type drain regions 7a, 7b are located oppositely to the linear regions 10a, 10b of the source region 6. The heavily doped drain region is not formed at the position facing the corner part of the source region 6.
申请公布号 JPH1050985(A) 申请公布日期 1998.02.20
申请号 JP19960201491 申请日期 1996.07.31
申请人 DENSO CORP 发明人 MORISHITA TOSHIYUKI;YAMAGUCHI HITOSHI;HIMI KEIMEI
分类号 H01L29/06;H01L29/423;H01L29/78 主分类号 H01L29/06
代理机构 代理人
主权项
地址
您可能感兴趣的专利