| 摘要 |
PROBLEM TO BE SOLVED: To monitor dispersion in dimension of all of device formation patterns by forming monitor patterns having a plurality of step patterns so as to reproduce a step in an underlayer of a device formation pattern. SOLUTION: Monitor patterns 14a and 14b are formed by unit patterns a to p. Each of the unit patterns a to p is constructed by a rectangular SDG region pattern (low stepped pattern) A and a linear gate wiring pattern (resist film pattern) B as a target to be monitored. For example, unit patterns a, g, h, and n are formed so that the interval between two SDG region patterns A most occupying the area in an actual LSI is minimized on the layout. The gate wiring patterns B each having the narrowest gate width permitted on the design rule are formed at the narrowest spacing on the underlayer steps including the two SDG region patterns A. |
