发明名称 PROCESS OF PRODUCTION OF CONTINUOUS FILM WITH DIAMOND-LIKE STRUCTURE AND GEAR FOR ITS IMPLEMENTATION
摘要 FIELD: production of films. SUBSTANCE: process of production of continuous thin film with diamond-like structure includes deposition of film on substrate from plasma of SHF discharge in atmosphere of working gas or mixture of gases. Negative electric displacement is supplied to substrate. Substrate is positioned outside zone of discharge under pressure 0.01-10.0 Pa with density of power flux in zone 0.2-5.0 Wt/sq.cm. Carbon-carrying gas or substances containing nitride-forming elements or substances including carbide-forming elements are used in the capacity of working gas or one of components of mixture. Gear for implementation of process has source 1 of SHF energy coupled through cylindrical waveguide 4 and dielectric window 3 to technological chamber 2. Chamber houses substrate holder 7 electrically insulated from chamber. Two solenoids 9, 10 are placed uniaxially with waveguide. First solenoid 9 is located in plane of dielectric window 3, second solenoid 10 is positioned between first solenoid 9 and substrate holder 7. Diaphragm 11 of ferromagnetic material is situated between second solenoid 10 and substrate holder 7. Distance between diaphragm 11 and second solenoid 10 does not exceed internal diameter of second solenoid 10. Diameter of diaphragm satisfies condition <EMI ID=0.310 HE=6 WI=60 TI=CHI>, where D<SB>odw</SB> is outer diameter of waveguide, cm; d<SB>1g</SB>- is diameter of hole in diaphragm, cm; D<SB>2</SB><SB>ids</SB> and D<SB>2</SB> <SB>ods</SB>- are correspondingly inner and outer diameters of second solenoid, cm. Holder 7 is placed from second solenoid 10 at distance not exceeding one characteristic linear dimension of substrate. Gear may be supplemented with third solenoid 12 and second diaphragm 13. Third solenoid 12 is positioned at distance <EMI ID=0.311 HE=6 WI=30 TI=CHI> from first diaphragm in direction of substrate holder, where D<SB>3</SB><SB>ids</SB> is inner diameter of third solenoid, cm; d<SB>1g</SB> is diameter of hole of first diaphragm. Second diaphragm is located between diaph
申请公布号 RU2105379(C1) 申请公布日期 1998.02.20
申请号 RU19940034306 申请日期 1994.09.29
申请人 ZAKRYTOE AKTSIONERNOE OBSHCHESTVO "TEKHNO-TM" 发明人 KAPUSTIN V.I.;LYSOV G.V.;BOBROV A.A.;SVITOV V.I.;TKACHEV V.I.;SIGOV A.S.;KAPUSTIN V.I.;LYSOV G.V.;BOBROV A.A.;SVITOV V.I.;TKACHEV V.I.;SIGOV A.S.
分类号 C23C16/27;C23C16/26;C23C16/50;H01L21/205;H05H1/30 主分类号 C23C16/27
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