| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable a high precision patterning by a high-speed etching by forming a thin film pattern by a dry etching with a specified gaseous mixture. SOLUTION: A thin film pattern (a translucent part of a half tone type phase shift mask) is formed by a dry etching with a gaseous mixture of one or more kinds of gas selected from among CF4 , SF6 and CCl4 each having a high etching rate with one or more kinds of gas selected from among H2 , CHF3 , C2 F6 , C3 F8 , C4 F8 , CH2 , F2 and N2 each having a high depositing property. A gaseous O2 -CF4 - CHF3 mixture is concretely used. Since a variation in a phase difference of the translucent part is not caused during patterning and a progress of etching of a side wall of the translucent part is suppressed by an action of CHF3 , an excessive side etching is inhibited and an objective phase shift mask having a desired phase difference patterned with a high precision is obtd.</p> |
