| 摘要 |
PROBLEM TO BE SOLVED: To obtain a product having a high carrier concn. and improved current-voltage characteristic of a semiconductor light emitting element by alternately irradiating a first element, second element and p-type impurity particle beams on a substrate. SOLUTION: A substrate is irradiated with first element, second element and p-type impurity particle beams alternately to grow a p-type compd. semiconductor contg. the first and second elements on it. Using an MBE crystal growing apparatus e.g. a p-type compd. semiconductor ZnTe deped with a p-type impurity, i.e., N and p-type compd. semiconductor ZnSe deped with a p-type impurity, i.e., N are alternately laminated to form a product by alternately irradiating a first element Zn, p-type impurity N and second element Te or Se in this order. |
