| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device which uses a silicon oxide film as an etching preventing film, and removes a silicon oxide film including phosphor with excellent selectivity. SOLUTION: A field oxide film 102, a gate oxide film 103, gate electrodes 104, N-type diffusion layers 105, 106, an interlayer insulating film 107 and a bit line 108 are formed on a P-type silicon substrate 101. Further, a silicon oxide film (NSG film) is formed as an etching preventing film 109, and contact holes are formed. A polysilicon film 110 and a PSG film 111 used as a spacer film are deposited and patterned, and further, polysilicon side walls 112 are formed. Then, only the spacer film (PSG film) 111 is selectively removed by using aqueous solution of hydrogen fluoride, hydrogen peroxide and water, to form storage node electrodes. |
