| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to obtain a large storage capacitance by adopting the constitution that capacitor electrodes and pixel electrodes for capacitors exist to face each other at the thickness below the thickness of gate insulating films for the capacitor for voltage maintenance. SOLUTION: Generally the same material is sued for the gate insulating film 24 and a protective film 32 and, therefore, at the time of selecting a material forming an intermediate layer (amorphous silicon) existing between both films, the material having corrosion selectively with both films is selected. After the protective film layer is patterned, a transparent conductive layer (ITO) is formed over the entire surface for the purpose of pixel electrode formation and storage electrode formation of the capacitors and if this film is patterned thereafter, the pixel electrodes 33 and drain electrodes 30 are brought into contact with each other and are electrically connected by contact holes 32. In addition, the pixel electrodes 33-1 for the capacitors and the amorphous silicon layer 27' remaining in a ring form are connected and these electrodes eventually play the role of the storage electrodes 27', 33-1 of the capacitors for voltage maintenance together with the amorphous silicon layer 27'.</p> |
