发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To prevent the peeling off and coming out of a plug material in a contact hole when part of the plug material protruding from within the contact hole onto the surface of an interlayer insulating film is buffed and removed. SOLUTION: A contact hole 8 with a hole diameter of about 0.5μm is patterned in an interlayer insulating film 7, and this interlayer insulating film 7 is subjected to heat treatment to reflow the interlayer insulating film 7 so that the contact hole 8 is deformed in such a manner that the side wall surface of the interlayer insulating film 7 within the contact hole 8 gradually extends inward direction of the hole as approaching from the upper and lower parts of the interlayer insulating film 7 to the central part thereof. Then, a W plug is filled into and formed in the contact hole 8 according to CVD process.
申请公布号 JPH1050837(A) 申请公布日期 1998.02.20
申请号 JP19960280372 申请日期 1996.10.01
申请人 NIPPON STEEL CORP 发明人 YOSHIZAWA SHUNICHI
分类号 H01L21/28;H01L21/768;H01L23/522;(IPC1-7):H01L21/768 主分类号 H01L21/28
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