发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the radiation quality of a semiconductor laser device, by filling a recess, provided in a laser mount so that an opening may be located opposite a semiconductor laser chip, with a heat sink having a higher thermal conductivity than the laser mount. SOLUTION: In a semiconductor laser device, a semiconductor laser chip 1 formed out of such a compound semiconductor as GaAs, an electrode layer 12, a laser mount 2 created out of Si substrate and a heat sink 3 are fastened by thermo-compression bondings, etc., using solders, etc. A recess 2a of the laser mount 2 is a filled with a heat sink 4 formed out of copper whose thermal conductivity is higher than that of the laser mount 2. Since the thermal conductivity of the heat sink 4 is higher than that of the laser mount 2, the radiation quality of the semiconductor device can be improved in comparison with conventional ones.
申请公布号 JPH1051065(A) 申请公布日期 1998.02.20
申请号 JP19960204570 申请日期 1996.08.02
申请人 MATSUSHITA ELECTRON CORP 发明人 KAWACHI YASUYUKI;UENO AKIRA;NAKANISHI HIDEYUKI;YOSHIMURA AKIO
分类号 H01S5/00;H01S5/02;H01S5/024;H01S5/026;(IPC1-7):H01S3/18 主分类号 H01S5/00
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