| 摘要 |
PROBLEM TO BE SOLVED: To fabricate a transistor having a push-up layer in which fluctuation in the depth of PN junction due to diffusion of impurities at an increased rate is suppressed along with the junction leak current. SOLUTION: A selective growth layer (push-up layer) 6B of silicon containing a substance, e.g. carbon, to be bonded easily with a point detect in a semiconductor substrate 1A and/or a substance, e.g. nitrogen, blocking diffusion of conductivity imparting impurities is formed on a region of the semiconductor substrate where an impurity region, e.g. source or drain, is formed. Conductivity determining impurity ions are then implanted into the selective growth layer (push-up layer) and the conductivity determining impurities are activated by heat treatment and diffused into the semiconductor substrate thus forming the impurity region, e.g. a source region or a drain region 9. |
