| 摘要 |
PROBLEM TO BE SOLVED: To obtain a low contact resistance, by providing a p-type contact layer formed out of a p-type InN semiconductor or a p-type In-Ga-N-based semiconductor on the p-type clad layer of the laser structure including an active layer, an n-type clad layer and a p-type clad layer using GaN-based semiconductors. SOLUTION: In a semiconductor laser, a contact layer has the composition of x>0.2 in p-type Inx Ga1-x N. Further, in the laser, an Si-doped n-type GaN buffer layer 2, an Si-doped n-type Al0.15 Ga0.85 N clad layer 3, an Si-doped n-type GaN optical confinement layer 4, an undoped InGaN multiple quantum well(MQW) active layer 5, an Mg-doped p-type GaN optical confinement layer 6, an Mg-doped p-type Al0.15 Ga0.85 N clad layer 7, an Mg-doped p-type contact layer 8, a p-type InGaN inclined-composition layer 9 with a gradually increased In composition and an Mg-doped p-type InN contact layer 10 are grown in succession on a substrate 1. The p-type InGaN inclined composition layer 9 with a gradally increased In composition reduces a potential barrier present between the Mg-doped p-type contact layer 8 and the Mg-doped p-type InN contact layer 10 to make a low contact resistance obtainable. |
