Verfahren zum Herstellen von Halbleiterkörpern mit MOVPE-Schichtenfolge

摘要

This invention concerns a process for producing at least one semiconductor body in which metal organic vapour phase epitaxy (MOVPE) is used to apply a layer sequence with an active zone (17) to a substrate wafer (2). Dry etching is used on the layer sequence to form at least one mesa trench (5) which is at least deep enough to cut through the active zone of the layer sequence. Subsequently, the composite of substrate wafer and layer sequence (3) is cut through so that at least one semiconductor body with at least one mesa flank is produced.