Semiconductor component manufacturing method for power IBGT, MOSFET in e.g. motor drive, robotics, lighting control

摘要

The manufacturing method involves preparing a substrate with a groove (T) on a surface, a base region (54) of a second conductivity, extending next to the groove side wall, and a source region (56) of first conductivity in the base region, extending adjacent to the groove side wall and to the first surface. An insulating region (64) is formed on the groove side wall, and a conductive region (65) is formed in the groove. Then first conductivity dopants are implanted through the insulating region and the groove side wall into the source region for increasing the first conductivity dopant concentration there.